Electrostatic discharge protection
US10211290B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 10, 2016 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Mar 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/813
Abstract
A bipolar junction transistor is configured to provide electrostatic discharge (ESD) protection for an integrated circuit. The bipolar junction transistor includes a substrate configured to function as a gate for the bipolar junction transistor. At least one drain finger extends in a first direction on a first surface of the substrate and is configured to function as a collector for the bipolar junction transistor. At least one source finger extends in the first direction on the first surface of the substrate and is configured to function as an emitter for the bipolar junction transistor. The at least one source finger includes a pickup region that is configured to set a substrate potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.