Semiconductor device, inverter circuit, driving device, vehicle, elevator, power supply circuit, and computer
US10211301B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2018 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Feb 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment includes: a wide bandgap semiconductor layer; a gate electrode; and a gate insulating layer disposed between the wide bandgap semiconductor layer and the gate electrode, including a first silicon oxide film, a second silicon oxide film between the first silicon oxide film and the gate electrode, and a first aluminum oxynitride film between the first silicon oxide film and the second silicon oxide film, and having a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the first aluminum oxynitride film which is lower than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position, closer to the second silicon oxide film than the first position, in the first aluminum oxynitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.