Semiconductor laser resonator and semiconductor laser device including the same
US10211597B2 · kind B2 · utility
0Cited by
12References
28Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 21, 2016 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Apr 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser resonator configured to generate a laser beam includes a gain medium layer including a semiconductor material and comprising at least one protrusion formed by at least one trench to protrude in an upper portion of the gain medium layer. In the semiconductor laser resonator, the at least one protrusion is configured to confine the laser beam as a standing wave in the at least one protrusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.