System and method for deducing charge density gradients in doped semiconductors
US10215796B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 10, 2016 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Jul 8, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2648
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system and a method determine a quality of a doped semiconductor layer in terms of a charge carrier density gradient by measuring two magnetic-field-dependent resistances using four contacts of a specimen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.