Patent · US Active

Waveguide modulator structures

US10216059B2 · kind B2 · utility

9Cited by
55References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 21, 2018
Grant dateFeb 26, 2019
Priority date
Expiry dateMar 21, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F2202/10
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optoelectronic device and method of making the same. In some embodiments, the optoelectronic device includes a substrate, a Mach-Zehnder waveguide modulator, and an epitaxial crystalline cladding layer. The Mach-Zehnder waveguide modulator includes a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, each of the left and right optical waveguides including a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion. The epitaxial crystalline cladding layer is on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, and has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.