Switching circuit for RF currents
US10217608B2 · kind B2 · utility
35Cited by
138References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 3, 2017 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Aug 3, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a switching circuit includes a first switch coupled to a first switch terminal, the first switch comprising at least one gallium nitride high-electron mobility transistor (GaN HEMT); a second switch coupled in series with the first switch and a second switch terminal, the second switching comprising a GaN HEMT; and at least one power source configured to provide power to the first switch and the second switch; wherein the second switch is configured to drive the first switch ON and OFF.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.