Method of manufacturing semiconductor device
US10217647B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2018 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Jul 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device may include forming active patterns, forming a polygonal mask pattern having a first width and a second width on the active patterns, forming an active region by executing a first etching process using the mask pattern, forming a first cutting mask for removing a first corner rounding in which a width of the active region is the first width, removing the first corner rounding by executing a second etching process using the first cutting mask, forming a second cutting mask for removing a second corner rounding in which the width of the active region is changed from the first width to the second width, and executing a third etching process using the second cutting mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.