Thin film transistor and manufacturing method thereof, array substrate, and display device
US10217774B2 · kind B2 · utility
3Cited by
2References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 16, 2017 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Jun 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.