Patent · US Active

Array substrate and manufacturing method thereof

US10217778B2 · kind B2 · utility

0Cited by
0References
14Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 15, 2016
Grant dateFeb 26, 2019
Priority date
Expiry dateDec 22, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/62
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The present invention provides an array substrate and a manufacturing method thereof. The method includes covering a reduction metal layer on an oxide semiconductor layer film and simultaneously forming a source pattern, a drain pattern, a pixel electrode pattern, and an oxide semiconductor layer through patterning the oxide semiconductor layer film and the reduction metal layer with one mask-based operation, followed by reducing the source pattern, the drain pattern, and the pixel electrode pattern to conductors through laser annealing to simultaneously form a source electrode, a drain electrode, and a pixel electrode. The entire manufacturing process needs, at most, only three rounds of mask-based operations so that, compared to the prior art, the number of mask-based operations required can be effectively reduced, the manufacturing operation can be simplified, and the performance of a TFT can be improved and an aperture ratio of the array substrate can be increased.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.