Patent · US Active

Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

US10217811B1 · kind B1 · utility

2Cited by

3References

17Claims

0Family size

Assignee

Kabushiki Kaisha Toshiba · JP

Inventors

Tatsuo Shimizu · Shinagawa, JP
Ryosuke Iijima · Setagaya, JP

Key dates

Filing date	Feb 9, 2018
Grant date	Feb 26, 2019
Priority date	—
Expiry date	Feb 9, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/661
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device according to an embodiment includes a silicon carbide layer having a front surface inclined at 0° or more and 10° or less with respect to a (0001) face, a silicon oxide layer, and a region located between the front surface and the silicon oxide layer and having the number of carbon-carbon single bonds larger than the number of carbon-carbon double bonds.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.