Semiconductor device
US10217823B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Dec 13, 2017 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Dec 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/484
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electron device having a channel layer made of graphene is disclosed. The electron device includes a graphene layer on a substrate, and a source electrode, a drain electrode, and a gate insulating film on the graphene layer. The electron device further includes a first gate electrode on the gate insulating film between the source electrode and the drain electrode, and a second gate electrode within the substrate. For the second gate electrode, another gate insulating film is on the graphene layer, or alternatively, a part of the substrate is interposed between the second gate electrode and the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.