Method of controlling electric conductivity of metal oxide thin film and thin film transistor including the metal oxide film having the controlled electric conductivity
US10217871B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Sep 26, 2016 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Sep 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for controlling an electric conductivity of a metal oxide thin film is disclosed. The method may include forming a metal oxide thin film; applying thermal treatment to the metal oxide thin film; and irradiating UV (ultraviolet)-rays to the metal oxide thin film in an atmosphere containing water molecules and oxygen molecules. Thus, the hydrogen may be doped into the metal oxide thin film to improve the electric conductivity of the metal oxide thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.