Quantum dot light-emitting device, fabricating method thereof, and display substrate
US10217953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2016 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Nov 30, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/774
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A quantum dot light-emitting device, a fabricating method thereof, and a display substrate are provided. The quantum dot light-emitting device includes: a base substrate; a first electrode layer, a light-emitting layer, a second electrode layer and an encapsulation layer which are sequentially formed on the base substrate, wherein the light-emitting layer includes a quantum dot light emitting material; a fluorescent material is disposed between the first electrode layer and the second electrode layer, and the fluorescent material includes a thermally activated delayed fluorescence (TADF) material; one of the first electrode layer and the second electrode layer is an anode layer, and the other of the first electrode layer and the second electrode layer is a cathode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.