Optoelectronic device
US10222677B2 · kind B2 · utility
8Cited by
52References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 6, 2017 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Jan 12, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.