Method of manufacturing integrated circuit device
US10224204B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2018 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Feb 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device is manufactured by a method including forming a stacked mask structure including a carbon-containing film and a silicon-containing organic anti-reflective film is on a substrate, forming a silicon-containing organic anti-reflective pattern by etching the silicon-containing organic anti-reflective film, and forming a composite mask pattern including a carbon-containing mask pattern and a profile control liner lining interior surfaces of the carbon-containing mask pattern by etching the carbon-containing film while using the silicon-containing organic anti-reflective pattern as an etch mask. Ions are implanted into the substrate through a plurality of spaces defined by the composite mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.