Patent · US Active

Semiconductor device

US10224331B2 · kind B2 · utility

2Cited by
13References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 5, 2018
Grant dateMar 5, 2019
Priority date
Expiry dateMar 5, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/959

Abstract

Provided is a semiconductor device including a substrate with first, second, and third logic cells, active patterns provided in each of the first to third logic cells to protrude from the substrate, and gate structures crossing the active patterns. The second and third logic cells are spaced apart from each other in a first direction with the first logic cell interposed therebetween. The active patterns are arranged in the first direction and extend in a second direction crossing the first direction. When measured in the first direction, a distance between the closest adjacent pair of the active patterns with each in the first and second logic cells respectively is different from that between the closest pair of the active patterns with each in the first and third logic cells respectively.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.