Memory device having vertical structure
US10224332B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2017 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | May 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate with an active region, a plurality of conductive line structures on the substrate, an insulating layer separating the plurality of conductive line structures from the substrate, a contact plug between every two adjacent conductive line structures, an insulating spacer structure between each conductive line structure and a corresponding contact plug, a landing pad connected to each contact plug, and a landing pad insulation pattern having an asymmetrical shape based on a vertical axis of the landing pad that extends along a normal to the substrate. The landing pad insulation pattern includes a first portion overlapping the conductive line structures and a second portion overlapping the contact plug, the first and second portions being on opposite sides of the vertical axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.