Semiconductor device and a method of making a semiconductor device
US10224443B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2017 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Apr 17, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
Abstract
An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.