Silicon resistor silicon photomultiplier
US10224450B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2017 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Jun 27, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4466
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device, silicon photomultiplier, and sensor are described. The disclosed semiconductor device is disclosed to include a substrate, a photosensitive area provided on the substrate, the photosensitive area corresponding to an area in which an electrical signal is generated in response to light impacting the photosensitive area, at least one trench substantially surrounding the photosensitive area, the at least one trench extending at least partially into the substrate, and a resistor confined by the at least one trench and in electrical communication with the active area such that the resistor is configured to carry electrical signals generated by the photosensitive area to a metal contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.