Semiconductor device and electric power control apparatus
US10224921B2 · kind B2 · utility
1Cited by
10References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2017 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Feb 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between a floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been determined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.