Crystal growth atmosphere for oxyorthosilicate materials production
US10227709B2 · kind B2 · utility
1Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2015 |
| Grant date | Mar 12, 2019 |
| Priority date | — |
| Expiry date | Jul 9, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.