Photosensitive imaging devices and associated methods
US10229951B2 · kind B2 · utility
3Cited by
352References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2017 |
| Grant date | Mar 12, 2019 |
| Priority date | — |
| Expiry date | Aug 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/135
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.