Semiconductor device and power conversion device
US10229974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2015 |
| Grant date | Mar 12, 2019 |
| Priority date | — |
| Expiry date | May 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
To solve a problem of realizing a large current and highly reliable power semiconductor device while shrinking a unit cell. A semiconductor device according to the present invention includes a plurality of p-type body regions extending in a first direction. The semiconductor device further includes: a JFET region formed to extend in the first direction between p-type body regions which are adjacent to each other in a second direction orthogonal to the first direction; an n+-type source region formed to extend in the first direction within a p-type body region and separate from an end side surface of the p-type body; and a channel region formed to extend in the first direction and in a top layer portion of a p-type body region between an end side surface of the p-type body region and an end side surface of an n+-type source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.