Patent · US Active

Method of manufacturing a layer containing quantum dots

US10232404B2 · kind B2 · utility

0Cited by

0References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Audrey Sanchot · Grenoble, FR
Bernard Aventurier · Grenoble, FR

Key dates

Filing date	Nov 14, 2016
Grant date	Mar 19, 2019
Priority date	—
Expiry date	Dec 16, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8513
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of manufacturing a layer containing quantum dots, the layer including first regions where the quantum dots are active and second regions where the quantum dots are inactive, the method including: a) depositing on a support a first layer of a matrix containing quantum dots; b) depositing on the first layer a second resist layer; c) exposing the second layer to light through a mask delimiting the first and second regions, and then developing the resin of the second layer to remove the resin of the second layer opposite the second regions while keeping it opposite the first regions; and d) removing the resin of the second layer opposite the first regions without removing the first layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.