Semiconductor nanoparticles and method of producing semiconductor nanoparticles
US10233389B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 21, 2016 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Sep 21, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/95
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.