Patent · US Active

Magnetic field sensor integrated circuit with integral ferromagnetic material

US10234513B2 · kind B2 · utility

29Cited by
298References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 20, 2012
Grant dateMar 19, 2019
Priority date
Expiry dateFeb 7, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19105
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A magnetic field sensor includes a lead frame, a semiconductor die supporting a magnetic field sensing element, a non-conductive mold material enclosing the die and a portion of the lead frame, a ferromagnetic mold material secured to the non-conductive mold material and a securing mechanism to securely engage the mold materials. The ferromagnetic mold material may comprise a soft ferromagnetic material to form a concentrator or a hard ferromagnetic material to form a bias magnet. The ferromagnetic mold material may be tapered and includes a non-contiguous central region, as may be an aperture or may contain the non-conductive mold material or an overmold material. Further embodiments include die up, lead on chip, and flip-chip arrangements, wafer level techniques to form the concentrator or bias magnet, integrated components, such as capacitors, on the lead frame, and a bias magnet with one or more channels to facilitate overmolding.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.