Patent · US Active

Energy controller for excimer-laser silicon crystallization

US10234765B2 · kind B2 · utility

0Cited by
10References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 5, 2017
Grant dateMar 19, 2019
Priority date
Expiry dateJun 5, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S3/1306
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Excimer laser annealing apparatus includes and excimer laser delivering laser-radiation pulses to a silicon layer supported on a substrate translated with respect to the laser pulses such that the consecutive pulses overlap on the substrate. The energy of each of the laser-radiation pulses is monitored, transmitted to control-electronics, and the energy of a next laser pulse is adjusted by a high-pass digital filter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.