Energy controller for excimer-laser silicon crystallization
US10234765B2 · kind B2 · utility
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Key dates
| Filing date | Jun 5, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Jun 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Excimer laser annealing apparatus includes and excimer laser delivering laser-radiation pulses to a silicon layer supported on a substrate translated with respect to the laser pulses such that the consecutive pulses overlap on the substrate. The energy of each of the laser-radiation pulses is monitored, transmitted to control-electronics, and the energy of a next laser pulse is adjusted by a high-pass digital filter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.