Field-effect transistor including first and second gate insulating layers, display element, image display device and system including field-effect transistor
US10235930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2016 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Jan 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.