Thin film and method for manufacturing thin film
US10236205B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2013 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Jun 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a kind of thin film and a fabrication method of thin films. The method comprises implanting ions under the surface of the original substrate by ion-implanting method, hence creating a thin film layer, a splitting layer and a remaining material layer on the original substrate; wherein, the thin film layer is on the surface of the original substrate and the splitting layer is between the thin film layer and the remaining material layer; the implanted ions are distributed in the splitting layer. Make the target substrate be in contact with the thin film layer of the original substrate, and then bond the original substrate to the target substrate by wafer-bonding method to form a bonding unit. Place the bonding unit into a prepared container to heat the bonding unit, so that the thin film layer is split off from the remaining material layer. After the splitting of the thin film layer and the remaining material layer, continue to heat the thin film layer and the target substrate in the prepared container for scheduled time under the condition of high pressure atmosphere. The present invention can greatly reduce the defect density of thin films, and the thi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.