Semiconductor device
US10236339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Aug 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/517
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes first to sixth semiconductor regions, a first electrode, and a first insulating film. The first semiconductor region includes first and second partial regions. The second semiconductor region is separated from the first partial region in a second direction crossing a first direction. The third semiconductor region is provided between the first partial region and the second semiconductor region. The fourth semiconductor region is provided between the first partial region and the third semiconductor region. The first electrode is separated from the second partial region, the second and third semiconductor regions, and a portion of the fourth semiconductor region. The first insulating film contacts the third semiconductor region. The fifth semiconductor region is provided between the first insulating film and the second partial region. The sixth semiconductor region is provided between the first insulating film and the fifth semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.