Method of producing an electronic device with a graphene device and semiconductor device formed on a common semiconductor substrate
US10236347B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jul 31, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Jul 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing an electronic device involves forming a graphene precursor on a first portion of a common semiconductor substrate, forming a graphene layer on the graphene precursor, and forming a semiconductor device on a second portion of the common semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.