P-type oxide, p-type oxide-producing composition, method for producing p-type oxide, semiconductor device, display device, image display apparatus, and system
US10236349B2 · kind B2 · utility
1Cited by
5References
13Claims
0Family size
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Key dates
| Filing date | Aug 14, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Aug 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≤x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.