Power semiconductor device trench having field plate and gate electrode

US10236351B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Thomas Feil · Villach, AT
• Michael Hutzler · Villach, AT

Key dates

• Filing date: Apr 18, 2017
• Grant date: Mar 19, 2019
• Expiry date: Apr 18, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A method of processing a power semiconductor device includes: providing a semiconductor body with a trench extending into the semiconductor body along an extension direction and including an insulator; providing a monolithic electrode zone within the trench; and removing a section of the monolithic electrode zone within the trench to divide the monolithic electrode zone into at least a first electrode structure and a second electrode structure arranged separately and electrically insulated from each other.