Semiconductor device and method of manufacturing the same, power converter, three-phase motor system, automobile and railway vehicle
US10236370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2015 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Sep 15, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB60L2200/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to suppress energization deterioration due to crystal defects in a semiconductor device including SiC-MOSFET. To solve this problem, a semiconductor device of the present invention includes: an n−-type epitaxial layer formed on a main surface of an n+-type SiC substrate; a p-type termination region that is annularly formed in the n−-type epitaxial layer outside an active region; and an n-type hole annihilation region annularly formed in the n−-type epitaxial layer outside the p-type termination region, apart from the p-type termination region. Then, the n-type hole annihilation region has a first end surface facing the p-type termination region, as well as a second end surface on the opposite side of the first end surface. When a depth of the n-type hole annihilation region is dTM, a depth of the p-type termination region is dNR, a thickness of the n−-type epitaxial layer is dEpi, a distance from the first end surface of the n-type hole annihilation region to the second end surface thereof is LNR, and a distance from the first end surface of the n-type hole annihilation region to the periphery of the semiconductor substrate is |XNR|, these vari…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.