Semiconductor nanocrystals, methods for making same, compositions, and products
US10236410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2014 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Apr 1, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/774
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 495 nm to 545 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 10. A co…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.