Light-emitting device
US10236411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2016 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Nov 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldDigital communication
- WIPO sectorElectrical engineering
Abstract
A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.