Thin film transistor, method for manufacturing the same, array substrate and display device
US10241371B2 · kind B2 · utility
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Key dates
| Filing date | Nov 14, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Nov 14, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor, a method for manufacturing the same, an array substrate and a display device are provided. The method for manufacturing a thin film transistor includes: providing a substrate; forming an active layer and a light shielding layer covering the active layer on the substrate by a patterning process, the light shielding layer being formed of a photoresist material; and forming a source-drain electrode layer and a passivation layer covering the source-drain electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.