MEMS-based 3D ion trapping device for using laser penetrating ion trapping structure, and method for manufacturing same
US10242859B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 18, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Apr 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J49/424
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.