Semiconductor devices and methods for manufacturing the same
US10242984B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Jun 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
According to example embodiments, a semiconductor device and a method for manufacturing the same are provided, the semiconductor device includes a substrate including a PMOSFET region and an NMOSFET region, a first gate electrode and a second gate electrode on the PMOSFET region, a third gate electrode and a fourth gate electrode on the NMOSFET region, and a first contact and a second contact connected to the first gate electrode and the fourth gate electrode, respectively. The first to fourth gate cut electrodes define a gate cut region that passes between the first and third gate electrodes and between the second and fourth gate electrodes. A portion of each of the first and second contacts overlaps with the gate cut region when viewed from a plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.