3-dimensional non-volatile memory device and method of fabricating the same
US10243000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | May 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
Provided are a 3-dimensional non-volatile memory device and a method of fabricating the same. The 3-dimensional non-volatile memory device may include a substrate; semiconductor pillars, which are arranged at a certain interval in a first direction and a second direction different from the first direction; a string isolation film, which is arranged between the semiconductor pillars arranged in the first direction among the semiconductor pillars and extends in the first direction and a third direction vertical to the main surface of the substrate; first sub-electrodes repeatedly stacked on the substrate in the third direction; second sub-electrodes, which are electrically isolated from the first sub-electrodes by the string isolation film, and are repeatedly stacked on the substrate in the third direction; and information storage films including a first information storage film and a second information storage film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.