Transistor device with a field electrode that includes two layers
US10243051B2 · kind B2 · utility
4Cited by
6References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 31, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Jul 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a transistor device and a method for producing a transistor device. The transistor device includes: a source region, a drift region, and a body region arranged between the source region and the drift region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. The field electrode includes at least two layers of different electrically conductive materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.