Semiconductor device and electrical device
US10243058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Aug 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×1019 atoms/cm3 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.