Fully integrated low-noise amplifier
US10243522B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 6, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Dec 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/75
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.