Gas flow device for a system for the radiation treatment of substrates
US10245616B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 5, 2014 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Jan 27, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB29C2035/0827
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A system for the radiation treatment of substrates, which includes at least one radiation source above the substrate holders in a chamber, which holders are to be equipped with substrates that are to be treated, and the chamber has means for maintaining a gas flow in the chamber, having at least one gas inlet and at least one gas outlet, characterized in that the at least one gas inlet is situated in the vicinity of the substrate holders so that gas flowing in by means of the at least one gas inlet first flows around the substrate holders before either exiting the chamber directly via the gas outlet or exiting after flowing around the at least one radiation source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.