Method for forming amorphous thin film
US10246773B2 · kind B2 · utility
0Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2016 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | May 9, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.