Ion trapping device with insulating layer exposure prevention and method for manufacturing same
US10248911B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 19, 2017 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Apr 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J49/4225
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion trap device is provided as well as a method of manufacturing the ion trap device including a substrate, central DC electrode, RF electrode, side electrode and an insulating layer. Disposed over the substrate, the central DC electrode includes DC connector pad and DC rail connected thereto. The RF electrode includes RF rail adjacent to the DC rail and RF pad connected to RF rail. The side electrode has RF electrode disposed between thereof and the central DC electrode. The insulating layer supports one of the central DC electrode, RF electrode and side electrode, on a top surface of the substrate. The insulating layer includes first insulating layer and second insulating layer disposed over the first insulating layer, and the second insulating layer includes an overhang protruding with respect to the first insulating layer in a width direction of the ion trap device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.