Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
US10249497B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Aug 30, 2017 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Aug 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating film provided on a front surface of the silicon carbide semiconductor substrate and including any one or a plurality of an oxide film, a nitride film, and an oxynitride film, and a gate electrode containing poly-silicon and provided on the gate insulating film. A concentration of fluorine in the gate insulating film at an interface with the silicon carbide semiconductor substrate is equal to or higher than 1×1019 atoms/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.