Semiconductor device and manufacturing method thereof
US10249514B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 1, 2016 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Jan 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/101
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor element, a substrate formed with a recess in a main surface, a conductive layer formed on the substrate and electrically connected to the semiconductor element, and a sealing resin covering the semiconductor element. The substrate is made of an electrically insulative synthetic resin. The recess has a bottom surface on which the semiconductor element is mounted, and an intermediate surface connected to the main surface and the bottom surface. The bottom surface is orthogonal to the thickness direction of the substrate. The intermediate surface is inclined with respect to the bottom surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.