Tunable device having a FET integrated with a BJT
US10249617B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2016 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Nov 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A device includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage can be applied to the back gate of the FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.