Split-gate conditional-reset image sensor
US10249660B2 · kind B2 · utility
8Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2014 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Sep 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a pixel array within an integrated-circuit image sensor, a pixel (870) includes a photodetector (260) and floating diffusion (262) formed within a substrate. First (881) and second (883) gate elements are disposed adjacent one another over a region (885) of the substrate between the photodetector and the floating diffusion and coupled respectively to a row line (TGr) that extends in a row direction within the pixel array and a column line (TGc) that extends in a column direction within the pixel array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.